View IR11662S_4466430.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

www.irf.com ? 2010 international rectifier march 23, 2010 IR11662S advanced smart rectifier tm control ic features ? secondary side high speed sr controller ? dcm, crcm flyback and resonant half-bridge topologies ? 200v proprietary ic technology ? max 500khz switching frequency ? anti-bounce logic and uvlo protection ? 4a peak turn off drive current ? micropower start-up & ultra low quiescent current ? 10.7v gate drive clamp ? 50ns turn-off propagation delay ? vcc range from 11.3v to 20v ? direct sensing of mosfet drain voltage ? enable function synchronized with mosfet vds transition ? cycle by cycle mot che ck circuit prevents multiple false trigger gate pulses ? lead-free ? compatible with 0.3w standby, energy star, cecp, etc. typical applications ? lcd & pdp tv, telecom smps, ac-dc adapters, atx smps, server smps product summary topology flyback, resonant half-bridge vd 200v v out 10.7v clamped i o+ & i o- (typical) +1a & -4a turn on propagation delay 60ns (typical) turn off propagation delay 50ns (typical) package options 8-lead soic typical connection diagram rmot cdc rg vd 5 vs 6 mot 3 ovt 2 en 4 gnd 7 vgate 8 vcc 1 u1 ir11671 q1 xf m co load rdc vin rtn ci rs cs *please note that this datasheet contains advance information that could change before the product is released to production. IR11662S datasheet no - pd97468
IR11662S www.irf.com ? 2010 international rectifier 2 table of contents page description 3 qualification information 4 absolute maximum ratings 5 electrical characteristics 6 functional block diagram 8 input/output pin equivalent circuit diagram 9 lead definitions 10 lead assignments 10 application information and additional details 12 package details 22 tape and reel details 23 part marking information 24 ordering information 25
IR11662S www.irf.com ? 2010 international rectifier 3 description ir11662 is a smart secondary-side driver ic desi gned to drive n-channel power mosfets used as synchronous rectifiers in isolated flyback and resonant half-bridge conver ters. the ic can control one or more paralleled n-mosfets to emulate the behavior of schottky diode rectifiers. the drain to source voltage is sensed differentially to determine the polarity of the current and turn the power switch on and off in proximity of the zero current transit ion. the cycle-by-cycle mot protecti on circuit can automatically detect no load condition and turn off gate driver output to av oid negative current flowing through the mosfets. ruggedness and noise immunity are accomplished us ing an advanced blanking scheme and double-pulse suppression which allow reliable operation in all operating modes.
IR11662S www.irf.com ? 2010 international rectifier 4 qualification information ? industrial ?? qualification level comments: this family of ics has passed jedec?s industrial qualification. ir?s consumer qualification level is granted by extension of t he higher industrial level. moisture sensitivity level msl2 ??? 260c (per ipc/jedec j-std-020) machine model class b (per jedec standard jesd22-a115) esd human body model class 1c (1500v) (per eia/jedec standard eia/jesd22-a114) ic latch-up test class i, level a (per jesd78) rohs compliant yes ? qualification standards can be found at international rectifier?s web site http://www.irf.com/ ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales repr esentative for further information. ??? higher msl ratings may be available for the specific package types listed here. please contact your international rectifier sales repr esentative for further information.
IR11662S www.irf.com ? 2010 international rectifier 5 absolute maximum ratings absolute maximum ratings indicate sustained limit s beyond which damage to the device may occur. all voltage parameters are absolute voltages referenced to co m, all currents are defined positive into any lead. the thermal resistance and power dissipation ra tings are measured under board mounted and still air conditions. parameters symbol min. max. units remarks supply voltage v cc -0.3 20 v enable voltage v en -0.3 20 v cont. drain sense voltage v d -1 200 v pulse drain sense voltage v d -5 200 v source sense voltage v s -3 20 v gate voltage v gate -0.3 20 v v cc =20v, gate off operating junction temperature t j -40 150 c storage temperature t s -55 150 c thermal resistance r ja 128 c/w soic-8 package power dissipation p d 970 mw soic-8, t amb =25c switching frequency fsw 500 khz recommended operating conditions for proper operation the device should be used within the recommended conditions. symbol definition min. max. units v cc supply voltage 11.4 18 v d drain sense voltage -3 ? 200 v t j junction temperature -25 125 c fsw switching frequency --- 500 khz ? v d -3v negative spike width 100ns recommended component values symbol component min. max. units r mot mot pin resistor value 5 75 k
IR11662S www.irf.com ? 2010 international rectifier 6 electrical characteristics vcc=15v and t a = 25c unless otherwise specifi ed. the output voltage and current (v o and i o ) parameters are referenced to gnd (pin7). supply section parameters symbol min. typ. max. units remarks supply voltage operating range v cc 11.4 18 v gbd v cc turn on threshold v cc on 9.8 10.55 11.3 v v cc turn off threshold (under voltage lock out) v cc uvlo 8.4 9 9.7 v v cc turn on/off hysteresis v cc hyst 1.55 v 8.5 10 ma c load = 1nf, f sw = 400khz operating current i cc 50 65 ma c load = 10nf, f sw = 400khz quiescent current i qcc 1.8 2.2 ma start-up current i cc start 100 200 a v cc =v cc on - 0.1v sleep current i sleep 150 200 a v en =0v, v cc =15v enable voltage high v enhi 2.15 2.70 3.2 v enable voltage low v enlo 1.2 1.6 2.0 v enable pull-up resistance r en 1.5 m gbd comparator section parameters symbol min. typ. max. units remarks -7 -3.5 0 ovt = 0v, v s =0v -15 -10.5 -7 ovt floating, v s =0v turn-off threshold v th1 -23 -19 -15 mv ovt = vcc, v s =0v turn-on threshold v th2 -150 -50 mv hysteresis v hyst 55 mv input bias current i ibias1 1 7.5 a v d = -50mv input bias current i ibias2 30 100 a v d = 200v comparator input offset v offset 2 mv gbd input cm voltage range v cm -0.15 2 v one-shot section parameters symbol min. typ. max. units remarks blanking pulse duration t blank 8 15 24 s 2.5 v v cc =10v ? gbd reset threshold v th3 5.4 v v cc =20v ? gbd hysteresis v hyst3 40 mv v cc =10v ? gbd minimum on time section parameters symbol min. typ. max. units remarks 180 240 300 ns r mot =5k ? ? v cc =12v minimum on time t onmin 2.25 3 3.75 s r mot =75k ? ? v cc =12v
IR11662S www.irf.com ? 2010 international rectifier 7 electrical characteristics vcc=15v and t a = 25c unless otherwise specifi ed. the output voltage and current (v o and i o ) parameters are referenced to gnd (pin7). gate driver section parameters symbol min. typ. max. units remarks gate low voltage v glo 0.3 0.5 v i gate = 200ma gate high voltage v gth 9.0 10.7 12.5 v v cc =12v-18v (internally clamped) rise time t r1 21 ns c load = 1nf, v cc =12v t r2 181 ns c load = 10nf, v cc =12v fall time t f1 10 ns c load = 1nf, v cc =12v t f2 44 ns c load = 10nf, v cc =12v turn on propagation delay t don 60 95 ns v ds to v gate -100mv overdrive turn off propagation delay t doff 50 75 ns v ds to v gate -100mv overdrive pull up resistance r up 5 i gate = 1a ? gbd pull down resistance r down 1.2 i gate = -200ma output peak current(source) i o source 1 a c load = 10nf ? gbd output peak current (sink) i o sink 4 a c load = 10nf ? gbd
IR11662S www.irf.com ? 2010 international rectifier 8 functional block diagram uvlo & regulator vd vcc vth1 gnd en vgate vs vth3 vth1 vth2 vth3 vgate v ds mot ovt vcc min off time reset min on time reset driver vcc cycle by cycle mot check circuit
IR11662S www.irf.com ? 2010 international rectifier 9 i/o pin equivalent circuit diagram vd gnd esd diode 200v diode r esd
IR11662S www.irf.com ? 2010 international rectifier 10 lead definitions pin# symbol description 1 vcc supply voltage 2 ovt offset voltage trimming 3 mot minimum on time 4 en enable 5 vd fet drain sensing 6 vs fet source sensing 7 gnd ground 8 vgate gate drive output lead assignments vd gnd vgate vs vcc mot en ovt 4 3 2 1 5 6 7 8
IR11662S www.irf.com ? 2010 international rectifier 11 detailed pin description vcc: power supply this is the supply voltage pin of the ic and it is monito red by the under voltage lockout circuit. it is possible to turn off the ic by pulling this pin below the minimum turn off threshold voltage, without damage to the ic. to prevent noise problems, a by pass ceramic capacitor connected to vcc and com should be placed as close as possible to the ir11662. this pin is internally clamped. ovt: offset voltage trimming the ovt pin will program the amount of input offset voltage for the turn-off threshold v th1 . the pin can be optionally tied to ground, to vcc or left fl oating, to select 3 ranges of input offset trimming. this programming feature allows for accommodating different r dson mosfets. mot: minimum on time the mot programming pin controls the amount of minimum on time. once v th2 is crossed for the first time, the gate signal will become active and turn on the power fet. spurious ringings and oscillations can trigger the input comparator off. the mot blanks the input comparator keeping the fet on for a minimum time. the mot is programmed between 200ns and 3us (typ.) by using a resistor referenced to com. en: enable this pin is used to activate the ic ?sleep? mode by pulling the voltage level below 1.6v (typ). in sleep mode the ic will consume a minimum amount of current. all switching functions will be disabled and the gate will be inactive. vd: drain voltage sense vd is the voltage sense pin for the power mosfet drai n. this is a high voltage pin and particular care must be taken in properly routing the connec tion to the power mosfet drain. additional filtering and or current limiting on this pin are not recommended as it would limit switching performance of the ic. vs: source voltage sense vs is the differential sense pin for the power mosfet s ource. this pin must not be connected directly to the power ground pin (7) but must be used to create a kelvin contact as close as possible to the power mosfet source pin. gnd: ground this is ground potential pin of the integrated control circuit. the internal devices and gate driver are referenced to this point. vgate: gate drive output this is the gate drive output of the ic. drive voltage is internally limit ed and provides 1a peak source and 4a peak sink capability. although this pin can be directly connected to the power mosfet gate, the use of minimal gate resistor is recommended, especially when putting multiple fets in parallel. care must be taken in order to keep the gate loop as short and as small as possible in order to achieve optimal switching performance.
IR11662S www.irf.com ? 2010 international rectifier 12 application information and additional details state diagram uvlo/sleep mode the ic remains in the uvlo condition until the volt age on the vcc pin exceeds the vcc turn on threshold voltage, v cc on . during the time the ic remains in the uvlo st ate, the gate drive circuit is inactive and the ic draws a quiescent current of i cc start . the uvlo mode is accessible fr om any other state of operation whenever the ic supply voltage condition of vcc < v cc uvlo occurs. the sleep mode is initiated by pulling the en pin below 1.6v (typ). in this mode the ic is essentially shut down and draws a very low quiescent supply current. normal mode and synchronized enable function the ic enters in normal operating mode once the uvlo voltage has been exceeded and the en voltage is above v enhi threshold. when the ic enters the normal m ode from the uvlo mode, the gate output is disabled (stays low) until v ds exceeds v th3 to activate the gate. this ensur es that the gate output is not enabled in the middle of a switching cycle. this logic prev ents any reverse currents across the device due to the minimum on time function in the ic. the gate will c ontinuously drive the sr mosfet after this one-time activation. the cycle by cycle mot prot ection circuit is enabled in normal mode. mot protection mode if the secondary current conduction time is shorter than the mot (minimum on time) setting, the next drive r output is disabled. this function can avoid reverse curr ent that occurs when the sy stem works at very low duty-cycles or at very light/no load conditions and r educe system standby power c onsumption by disabling gate outputs. the cycle by cycle mot check circuit is always activated under normal mode and mot protection mode, so that the ic c an automatically resume normal operation once the load increases to a level and the secondary current conduction time is longer than mot.
IR11662S www.irf.com ? 2010 international rectifier 13 general description the ir11662 smart rectifier ic can emulate the oper ation of diode rectifier by properly driving a synchronous rectifier (sr) mosfet. the direction of the rectified current is sensed by the input comparator using the power mosfet r dson as a shunt resistance and the gate pin of the mosfet is driven accordingly. internal blanking logic is used to prevent spurious transitions and guarantee operation in continuous (ccm), discontinuous (dcm) and critical (crcm) conduction mode. ir11662 is suitable for flyback and resonant half-bridge topologies. v gate v th1 v th2 v th3 v ds figure 1: input comparator thresholds flyback application the modes of operation for a flyback circuit differ main ly for the turn-off phase of the sr switch, while the turn-on phase of the secondary switch (which corresponds to the turn off of the primary side switch) is identical. turn-on phase when the conduction phase of the sr fet is initiated, current will start flowing through its body diode, generating a negative v ds voltage across it. the body diode has generally a much higher voltage drop than the one caused by the mosfet on resistance and t herefore will trigger the turn-on threshold v th2 . at that point the ir11662 will drive the gate of mosfet on which will in turn cause the conduction voltage vds to drop down. this drop is usually accompanied by some amount of ringing, that can trigger the input comparator to turn off; hence, a minimum on time (mot) blanking period is used that will maintain the power mosfet on for a minimum amount of time. the programmed mot will limit also the minimum duty cycle of the sr mosfet and, as a consequence, the max duty cycle of the primary side switch. dcm/crcm turn-off phase once the sr mosfet has been turned on, it will remain on until the rectified current will decay to the level where v ds will cross the turn-off threshold v th1 . this will happen differently depending on the mode of operation. in dcm the current will cross the threshold with a rela tively low di/dt. once the threshold is crossed, the current will start flowing again th ru the body diode, causing the v ds voltage to jump negative. depending on the amount of residual current, v ds may trigger once again the turn on threshold: for this reason v th2 is blanked for a certain amount of time (t blank ) after v th1 has been triggered. the blanking time is internally set. as soon as v ds crosses the positive threshold v th3 also the blanking time is terminated and the ic is ready for next conduction cycle.
IR11662S www.irf.com ? 2010 international rectifier 14 i prim i sec v sec v prim time time t1 t2 t3 figure 2: primary and secondary currents and voltages for dcm mode i prim i sec v sec v prim time time t1 t2 figure 3: primary and secondary currents and voltages for crcm mode ccm turn-off phase in ccm mode the turn off transition is much steeper and di/dt involved is much higher. the turn on phase is identical to dcm or crcm and therefore won?t be repeated here. during the sr fet conduction phase the cu rrent will decay linearly, and so will v ds on the sr fet. once the primary switch will start to turn back on, the sr fet current will rapidly decrease crossing v th1 and turning the gate off. the turn off speed is critic al to avoid cross conduction on the primary side and reduce switching losses. also in this case a blanking period will be applied, but gi ven the very fast nature of this transition, it will be reset as soon as v ds crosses v th3 .
IR11662S www.irf.com ? 2010 international rectifier 15 i prim i sec v sec v prim time time t1 t2 figure 4: primary and secondary currents and voltages for ccm mode the operation waveforms of ir11662 in a flyback converter under ccm mode and dcm/crcm were shown in figure 5 and figure 6 respectively. i sec v ds time time t1 t2 v th1 v th2 v th3 blanking mot time gate drive figure 5: secondary side ccm operation
IR11662S www.irf.com ? 2010 international rectifier 16 gate drive i sec v ds blanking time time t1 t2 v th1 v th2 v th3 10us blanking mot figure 6: secondary side dcm/crcm operation resonant half-bridge application the typical application circuit of ir11662 in llc half-bridge is shown in figure 7. rmot2 cvcc2 rcc2 rmot1 cvcc1 rcc1 vcc 1 ovt 2 mot 3 en 4 gate 8 gnd 7 vs 6 vd 5 ir11662 lr t1 cout lm m2 m1 vin cr rtn m3 m4 rg1 vout vcc 1 ovt 2 mot 3 en 4 gate 8 gnd 7 vs 6 vd 5 ir11662 rg2 figure 7: resonant half-bridge application circuit in resonant half-bridge converter, the turn-on phase and turn-off phase is similar to flyback except the current shape is sinusoid. the typical operation waveform can be found below.
IR11662S www.irf.com ? 2010 international rectifier 17 figure 8: resonant half-bridge operation waveform mot protection mode the mot protection prevents reverse current in sr mosfet which could happen at light load if the mot time is set very long. the ic disables the gate out put in the protection mode and automatically resume to normal operation as the load increasing to a level where the sr current conduction time is longer than mot. this function works in both flyback and resonant half- bridge topologies. figure 9 is an example in flyback converter. figure 9: mot protection mode
IR11662S www.irf.com ? 2010 international rectifier 18 synchronized enable function sync enable function guarantees the vgate always starts switching at the beginning of a switching cycle. this function works in both flyback and resonant half- bridge topologies. figure 10 is an example in resonant half-bridge converter. figure 10: synchronized enable function (resonant half-bridge) general timing waveform t vcc vcc on uvlo vcc uvlo normal uvlo figure 11: vcc uvlo 10% 90% t rise v th2 t fall v th1 t doff t don 50% v ds v gate figure 12: timing waveform
IR11662S www.irf.com ? 2010 international rectifier 19 0.01 0.1 1 10 5 v 10 v 15 v 20 v i supply (ma) supply voltage figure 13: supply current vs. supply voltage 8 v 9 v 10 v 11 v -50 c 0 c 50 c 100 c 150 c vcc uvlo thresholds temperature vcc on vcc uvlo figure 14: undervoltage lockout vs. temperature 1.0 1.5 2.0 -50 c 0 c 50 c 100 c 150 c i cc supply current (ma) temperature i qcc figure 15: icc quiescent currrent vs. temperature 7.5 8.0 8.5 -50 c 0 c 50 c 100 c 150 c i cc supply current (ma) te m p e r a t u r e icc @400khz, c load =1nf figure 16: icc supply currrent @1nf load vs. temperature
IR11662S www.irf.com ? 2010 international rectifier 20 -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 -50 c 0 c 50 c 100 c 150 c v th1 threshold (mv) temperature ovt=gnd ovt=floating ovt=vcc figure 17: v th1 vs. temperature -150.0 -100.0 -50.0 0.0 -50 c 0 c 50 c 100 c 150 c v th2 thresholds (mv) temperature figure 18: v th2 vs. temperature 50.0 75.0 100.0 -50 c 0 c 50 c 100 c 150 c comparator hysteresis v hyst (mv) temperature figure 19: comparator hysteresis vs. temperature -15.0 -12.0 -9.0 -6.0 -50 c 0 c 50 c 100 c 150 c v th1 threshold (mv) temperature vs=-150mv vs=0v vs=+2v figure 20: v th1 vs. temperature at common mode (ovt=floating)
IR11662S www.irf.com ? 2010 international rectifier 21 -150.0 -100.0 -50.0 -50 c 0 c 50 c 100 c 150 c v th2 threshold (mv) temperature vs=-150mv vs=0v vs=+2v figure 21: v th2 vs. temperature at common mode 0 us 1 us 2 us 3 us 4 us -50 c 0 c 50 c 100 c 150 c minimum on time (us) temperature rmot=5k rmot=75k figure 22: mot vs temperature 1.0 v 1.5 v 2.0 v 2.5 v 3.0 v -50 c 0 c 50 c 100 c 150 c enable thresholds temperature ven hi ven lo figure 23: enable threshold vs. temperature 35 ns 40 ns 45 ns 50 ns 55 ns 60 ns 65 ns 70 ns 75 ns -50 c 0 c 50 c 100 c 150 c propagation delay temperature turn-on propagation delay turn-off propagation delay figure 24: turn-on and turn-off propagation delay vs. temperature
IR11662S www.irf.com ? 2010 international rectifier 22 package details: soic8n
IR11662S www.irf.com ? 2010 international rectifier 23 tape and reel details: soic8n e f a c d g a b h n ote : controlling dimension in mm loaded tape feed direction a h f e g d b c carrier tape dimension for 8soicn code min max min max a 7.90 8.10 0.311 0.318 b 3.90 4.10 0.153 0.161 c 11.70 12.30 0.46 0.484 d 5.45 5.55 0.214 0.218 e 6.30 6.50 0.248 0.255 f 5.10 5.30 0.200 0.208 g 1.50 n/a 0.059 n/a h 1.50 1.60 0.059 0.062 metric imperial reel dimensions for 8soicn code min max min max a 329.60 330.25 12.976 13.001 b 20.95 21.45 0.824 0.844 c 12.80 13.20 0.503 0.519 d 1.95 2.45 0.767 0.096 e 98.00 102.00 3.858 4.015 f n/a 18.40 n/a 0.724 g 14.50 17.10 0.570 0.673 h 12.40 14.40 0.488 0.566 metric imperial
IR11662S www.irf.com ? 2010 international rectifier 24 part marking information
IR11662S www.irf.com ? 2010 international rectifier 25 ordering information standard pack base part number package type form quantity complete part number tube/bulk 95 IR11662Spbf IR11662S soic8n tape and reel 2500 IR11662Strpbf the information provided in this document is believed to be accu rate and reliable. however, international rectifier assumes no responsibility for the consequences of the use of this information. international rectifier assumes no responsibility for any infringement of patents or of other rights of third parties which may result fr om the use of this information. no license is granted by imp lication or otherwise under any patent or patent rights of international rectif ier. the specifications ment ioned in this document are subj ect to change without notice. this document supersedes and replaces all inform ation previously supplied. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105

▲Up To Search▲

Price & Availability of IR11662S

	To Download IR11662S Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .